MMBT8050 as complementary type the pnp transistor mmbt8550 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 25 v emitter base voltage v ebo 6 v collector current i c 600 ma power dissipation p tot 350 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 1 v, i c = 100 ma at v ce = 1 v, i c = 500 m a MMBT8050c MMBT8050d h fe h fe h fe 100 160 40 - - - 250 400 - - - - collector base cutoff current at v cb = 35 v i cbo - - 100 na collector base breakdown voltage at i c = 10 a v (br)cbo 40 - - v collector emitter breakdown voltage at i c = 2 ma v (br)ceo 25 - - v emitter base breakdown voltage at i e = 100 a v (br)ebo 6 - - v collector emitter saturation voltage at i c = 500 ma, i b = 50 ma v ce(sat) - - 0.5 v base emitter saturation voltage at i c = 500 ma, i b = 50 ma v be(sat) - - 1.2 v gain bandwidth product at v ce = 5 v, i c = 10 ma f t - 100 - mhz sot-23 plastic package product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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